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Hollow cathode enhanced capacitively coupled plasmas in Ar/N2/H2 mixtures and implications for plasma enhanced ALD.

Authors :
Boris, David R.
Johnson, Michael J.
Eddy Jr., Charles R.
Walton, Scott G.
Source :
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jul2022, Vol. 40 Issue 4, p1-16, 16p
Publication Year :
2022

Abstract

Plasma enhanced atomic layer deposition (PEALD) is a cyclic atomic layer deposition process that incorporates plasma-generated species into one of the cycle substeps. The addition of plasma is advantageous as it generally provides unique gas-phase chemistries and a substantially reduced growth temperature compared to thermal approaches. However, the inclusion of plasma, coupled with the increasing variety of plasma sources used in PEALD, can make these systems challenging to understand and control. This work focuses on the use of plasma diagnostics to examine the plasma characteristics of a hollow cathode enhanced capacitively coupled plasma (HC-CCP) source, a type of plasma source that has seen increasing attention in recent years for PEALD. Ultraviolet to near-infrared spectroscopy as well as spatially resolved Langmuir probe and emissive probe measurements are employed to characterize an HC-CCP plasma source using nitrogen based gas chemistries typical of nitride PEALD processes. Spectroscopy is used to characterize the relative concentrations of important reactive and energetic neutral species generated in HC-CCP systems as a function of applied RF power, gas chemistry, and pressure. In addition, the electron energy distribution function, electron temperature, plasma potential, and plasma density for the same process parameters are examined using an RF compensated Langmuir probe and emissive probe. These measurements indicated that electron temperature (T<subscript>e</subscript>), electron density (n<subscript>e</subscript>), and plasma potential (V<subscript>p</subscript>) varied significantly over the operating conditions examined with T<subscript>e</subscript> varying from 1.5 to 8 eV, V<subscript>p</subscript> varying from 30 to 90 V, and n<subscript>e</subscript> varying between 10<superscript>15</superscript> and low 10<superscript>16</superscript> m<superscript>−3</superscript>. This wide range of plasma conditions is mediated by a mode transition from a low T<subscript>e</subscript>, high n<subscript>e</subscript> mode of operation at low pressure (<100 mTorr) to a high T<subscript>e</subscript>, low n<subscript>e</subscript> mode at higher pressures (>100 mTorr). These operational modes appear analogous to the classical γ and α modes of traditional capacitively coupled plasmas. Atomic N and H densities also vary significantly over the operating conditions examined. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
21662746
Volume :
40
Issue :
4
Database :
Complementary Index
Journal :
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics
Publication Type :
Academic Journal
Accession number :
158114918
Full Text :
https://doi.org/10.1116/6.0001840