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A 220–261 GHz Frequency Multiplier Chain (× 18) With 8-dBm Peak Output Power in 130-nm SiGe.

Authors :
Turkmen, Esref
Aksoyak, Ibrahim Kagan
Debski, Wojciech
Winkler, Wolfgang
Ulusoy, Ahmet Cagri
Source :
IEEE Microwave & Wireless Components Letters; Jul2022, Vol. 32 Issue 7, p895-898, 4p
Publication Year :
2022

Abstract

This letter presents a 220–261-GHz frequency multiplier-by-18 chain in a 130-nm SiGe BiCMOS technology. It consists of three amplifiers (12–15, 110–135, and 216–270 GHz), two frequency triplers (36–45 and 108–135 GHz), a third-order Chebyshev bandpass filter (36–45 GHz), and a modified Gilbert-cell-based frequency doubler (216–270 GHz). The peak output power is about 8 dBm at 240 GHz with a 3-dB bandwidth of 41 GHz for an input power of −7 dBm. The unwanted harmonics are suppressed more than 25 dBc over the frequency range of interest. It consumes a dc current of 114.7 mA from a supply voltage of 3.3 V in the quiescent operation and drains a current of 130 mA for an input power of −7 dBm, which results in a drain efficiency of 1.47%. The total circuit occupies an area of 0.58 mm 2 (1.35 mm $\times0.43$ mm). [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
15311309
Volume :
32
Issue :
7
Database :
Complementary Index
Journal :
IEEE Microwave & Wireless Components Letters
Publication Type :
Academic Journal
Accession number :
157840712
Full Text :
https://doi.org/10.1109/LMWC.2022.3154352