Reduced Schottky barrier height at metal/CVD-grown MoTe2 interface.

We demonstrated that Schottky barrier height (SBH) at the metal/CVD-grown MoTe₂ interface can be significantly reduced with tunnel contact by inserting a thin Al₂O₃ layer regardless of the metal work function. The existence of strong Fermi level pinning (FLP) at the metal/MoTe₂ interface was verified, while depinning cannot be achieved with Al₂O₃ insertion. Thus, the fixed charges inside the Al₂O₃ were proposed to be responsible for the effective SBH reduction in virtue of the eliminated SBH reduction after the post-annealing treatment. This work provides a feasible way to solve the contact issue and favors for the fabrication of high performance MoTe₂-based electronic devices. [ABSTRACT FROM AUTHOR]