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9‐1: Evaluation of X‐ray Resistance of Submicron‐Size c‐Axis Aligned Crystalline‐Oxide Semiconductor.
- Source :
- SID Symposium Digest of Technical Papers; Jun2022, Vol. 53 Issue 1, p78-81, 4p
- Publication Year :
- 2022
-
Abstract
- We have investigated the total ionizing dose effect by X‐rays, which is a degradation mode of a single transistor, to find the radiation resistance of oxide semiconductor large scale integrated circuit. At 3000 Gy corresponding to the absorbed dose for 30 years in a space environment, or more specifically, on a geostationary orbit, an oxide semiconductor field‐effect transistor showed a negative drift in threshold voltage of less than 300m V and substantially no degradation in subthreshold slope and mobility. After 60 hours from the irradiation, approximately 40% of the threshold voltage variation was recovered. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0097966X
- Volume :
- 53
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- SID Symposium Digest of Technical Papers
- Publication Type :
- Academic Journal
- Accession number :
- 157690798
- Full Text :
- https://doi.org/10.1002/sdtp.15421