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Port Parameter Extraction-Based Self-Consistent Coupled EM-Circuit FEM Solvers.

Authors :
Ramachandran, Omkar H.
O'Connor, Scott
Crawford, Zane D.
Kempel, Leo C.
Shanker, B.
Source :
IEEE Transactions on Components, Packaging & Manufacturing Technology; Jun2022, Vol. 12 Issue 6, p1040-1048, 9p
Publication Year :
2022

Abstract

Self-consistent solution to electromagnetic (EM)-circuit systems is of significant interest for a number of applications. This has resulted in exhaustive research on means to couple them. In time domain, this typically involves a tight integration (or coupling) with field and non-linear circuit solvers. This is in stark contrast to coupled analysis of linear/weakly non-linear circuits and EM systems in frequency domain. Here, one typically extracts equivalent port parameters that are then fed into the circuit solver. Such an approach has several advantages: 1) the number of ports is typically smaller than the number of degrees of freedom, resulting in cost savings; 2) is circuit agnostic; and 3) can be integrated with a variety of device models. Port extraction is tantamount to obtaining impulse response of the linear EM system. In time domain, the deconvolution required to effect this is unstable. Recently, a novel approach was developed for time domain integral equations (TDIEs) to overcome this bottleneck. We extend this approach to time domain finite element method, and demonstrate its utility via a number of examples; significantly, we demonstrate that self-consistent solutions obtained using either a fully coupled or port extraction is identical to the desired precision for non-linear circuit systems. This is shown within a nodal network. We also demonstrate integration of port extracted data directly with drift diffusion equation to model device physics. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
21563950
Volume :
12
Issue :
6
Database :
Complementary Index
Journal :
IEEE Transactions on Components, Packaging & Manufacturing Technology
Publication Type :
Academic Journal
Accession number :
157687735
Full Text :
https://doi.org/10.1109/TCPMT.2022.3173487