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Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning.
- Source :
- Nature Electronics; Jun2022, Vol. 5 Issue 6, p356-366, 11p
- Publication Year :
- 2022
Details
- Language :
- English
- ISSN :
- 25201131
- Volume :
- 5
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Nature Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 157668596
- Full Text :
- https://doi.org/10.1038/s41928-022-00768-0