Ultraefficient resistance switching between charge ordered phases in 1T-TaS2 with a single picosecond electrical pulse.

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of 1T-TaS₂ has shown to be potentially useful for development of high-speed, energy efficient nonvolatile memory devices. Measurement of the electrical operation of such devices in the picosecond regime is technically challenging and hitherto still largely unexplored. Here, we use an optoelectronic "laboratory-on-a-chip" experiment for measurement of ultrafast memory switching, enabling accurate measurement of electrical switching parameters with 100 fs temporal resolution. Photoexcitation and electro-optic sampling on a (Cd,Mn)Te substrate are used to generate and, subsequently, measure electrical pulse propagation with intra-band excitation and sub-gap probing, respectively. We demonstrate high contrast nonvolatile resistance switching from high to low resistance states of a 1T-TaS₂ device using single sub-2 ps electrical pulses. Using detailed modeling, we find that the switching energy density per unit area is exceptionally small, E A = 9.4 fJ/μm². The speed and energy efficiency of an electronic "write" process place the 1T-TaS₂ devices into a category of their own among new generation nonvolatile memory devices. [ABSTRACT FROM AUTHOR]