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Alloy-buffer-controlled van der Waals epitaxial growth of aligned tellurene.
- Source :
- Nano Research; Jun2022, Vol. 15 Issue 6, p5712-5718, 7p
- Publication Year :
- 2022
-
Abstract
- Group-VI elemental two-dimensional (2D) materials (e.g., tellurene (Te)) have unique crystalline structures and extraordinarily physical properties. However, it still remains a great challenge to controllably grow 2D Te with good repeatability, uniformity, and highly aligned orientation using vapor growth method. Here, we design a Cu foil-assisted alloy-buffer-controlled growth method to epitaxially grow aligned single-crystalline 2D Te on an insulating mica substrate. The in-situ formation of Cu−Te alloy plays a key role on 2D Te growth, alleviating the spatial and temporal non-uniformity of precursor in conventional vapor deposition process. Through transmission electron microscopy (TEM) analysis combined with theoretical calculations, we unveil that the alignment growth of Te in the [110] direction is along the [600] direction of mica, owing to the small lattice mismatch (0.15%) and strong binding strength. This work presents a method to grow aligned high-quality 2D Te in a controllable manner. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19980124
- Volume :
- 15
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Nano Research
- Publication Type :
- Academic Journal
- Accession number :
- 157262522
- Full Text :
- https://doi.org/10.1007/s12274-022-4188-7