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The Role of the Graphene Oxide (GO) and Reduced Graphene Oxide (RGO) Intermediate Layer in CZTSSe Thin-Film Solar Cells.
- Source :
- Materials (1996-1944); May2022, Vol. 15 Issue 10, p3419-3419, 10p
- Publication Year :
- 2022
-
Abstract
- Cu<subscript>2</subscript>ZnSn(S,Se)<subscript>4</subscript> (CZTSSe) solar cells with low cost and eco-friendly characteristics are attractive as future sources of electricity generation, but low conversion efficiency remains an issue. To improve conversion efficiency, a method of inserting intermediate layers between the CZTSSe absorber film and the Mo back contact is used to suppress the formation of MoSe<subscript>2</subscript> and decomposition of CZTSSe. Among the candidates for the intermediate layer, graphene oxide (GO) and reduced GO have excellent properties, including high-charge mobility and low processing cost. Depending on the type of GO, the solar cell parameters, such as fill factor (FF), were enhanced. Thus, the conversion efficiency of 6.3% was achieved using the chemically reduced GO intermediate layer with significantly improved FF. [ABSTRACT FROM AUTHOR]
- Subjects :
- SOLAR cells
GRAPHENE oxide
ELECTRIC power production
PHOTOVOLTAIC power systems
Subjects
Details
- Language :
- English
- ISSN :
- 19961944
- Volume :
- 15
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Materials (1996-1944)
- Publication Type :
- Academic Journal
- Accession number :
- 157241857
- Full Text :
- https://doi.org/10.3390/ma15103419