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The Role of the Graphene Oxide (GO) and Reduced Graphene Oxide (RGO) Intermediate Layer in CZTSSe Thin-Film Solar Cells.

Authors :
Jeong, Woo-Lim
Park, Sang-Hyuk
Jho, Young-Dahl
Joo, Soo-Kyung
Lee, Dong-Seon
Source :
Materials (1996-1944); May2022, Vol. 15 Issue 10, p3419-3419, 10p
Publication Year :
2022

Abstract

Cu<subscript>2</subscript>ZnSn(S,Se)<subscript>4</subscript> (CZTSSe) solar cells with low cost and eco-friendly characteristics are attractive as future sources of electricity generation, but low conversion efficiency remains an issue. To improve conversion efficiency, a method of inserting intermediate layers between the CZTSSe absorber film and the Mo back contact is used to suppress the formation of MoSe<subscript>2</subscript> and decomposition of CZTSSe. Among the candidates for the intermediate layer, graphene oxide (GO) and reduced GO have excellent properties, including high-charge mobility and low processing cost. Depending on the type of GO, the solar cell parameters, such as fill factor (FF), were enhanced. Thus, the conversion efficiency of 6.3% was achieved using the chemically reduced GO intermediate layer with significantly improved FF. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
19961944
Volume :
15
Issue :
10
Database :
Complementary Index
Journal :
Materials (1996-1944)
Publication Type :
Academic Journal
Accession number :
157241857
Full Text :
https://doi.org/10.3390/ma15103419