Strain engineering of lateral heterostructures based on group-V enes (As, Sb, Bi) for infrared optoelectronic applications calculated by first principles.

Details

Language :

English

ISSN :

20462069

Volume :

12

Issue :

23

Database :

Complementary Index

Journal :

RSC Advances

Publication Type :

Academic Journal

Accession number :

157152689

Full Text :

https://doi.org/10.1039/d2ra02108k