High-quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant.

MLA

Tang, Wenbo, et al. “High-Quality (001) β-Ga2O3 Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition Enabled by in Situ Indium Surfactant.” Applied Physics Letters, vol. 120, no. 21, May 2022, pp. 1–7. EBSCOhost, https://doi.org/10.1063/5.0092754.

APA

Tang, W., Ma, Y., Zhang, X., Zhou, X., Zhang, L., Zhang, X., Chen, T., Wei, X., Lin, W., Mudiyanselage, D. H., Fu, H., & Zhang, B. (2022). High-quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant. Applied Physics Letters, 120(21), 1–7. https://doi.org/10.1063/5.0092754

Chicago

Tang, Wenbo, Yongjian Ma, Xiaodong Zhang, Xin Zhou, Li Zhang, Xuan Zhang, Tiwei Chen, et al. 2022. “High-Quality (001) β-Ga2O3 Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition Enabled by in Situ Indium Surfactant.” Applied Physics Letters 120 (21): 1–7. doi:10.1063/5.0092754.