Effect of boron doping on energy storage performance of PLZST ceramics.

Authors :: Chen, Hong
Chen, Hongwei
Gao, Libin
Deng, Bowen
Zhang, Jihua
Source :: Ferroelectrics; 2022, Vol. 589 Issue 1, p152-160, 9p
Publication Year :: 2022
Abstract: In this paper, thick film antiferroelectric ceramics (1-x)(Pb<subscript>0.97</subscript>La<subscript>0.02</subscript>)(Zr<subscript>0.46</subscript>Sn<subscript>0.48</subscript>Ti<subscript>0.06</subscript>)O<subscript>3</subscript>-xH<subscript>3</subscript>BO<subscript>3</subscript> ((1-x)PLZST-xH<subscript>3</subscript>BO<subscript>3</subscript>, x = 0–0.025) were prepared by solid state sintering and tape-casting method. The effects of boron-doping on the microstructure, dielectric properties and energy storage properties of (1-x)PLZST-xH<subscript>3</subscript>BO<subscript>3</subscript> ceramics were investigated. Appropriate boron-doping can improve the stability of antiferroelectric phase, delay phase transition and increase saturation polarization strength. Compared with the undoped PLZST thick films, the maximum polarization intensity increased by 1.9 times and the residual polarization decreased by 37%. When x = 0.020, the maximum recoverable energy storage density is 2.74 J/cm<superscript>3</superscript>, and the energy storage efficiency is 88.12%. [ABSTRACT FROM AUTHOR]