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Supercapacitor characteristics of MoS2 and MoOx coated onto honeycomb-shaped carbon nanotubes.

Authors :
Li, Wei
Huang, Yung-Jui
Lin, Pao-Hung
Chao, Liang-Chiun
Lee, Kuei-Yi
Source :
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; May2022, Vol. 40 Issue 3, p1-11, 11p
Publication Year :
2022

Abstract

Two-dimensional molybdenum disulfide (MoS<subscript>2</subscript>) with multilayer hierarchical structures is generally considered to be able to provide more active sites and shorter diffusion channels for electrolytes, which make them extremely suitable for supercapacitor applications. Nevertheless, the MoS<subscript>2</subscript> poor conductivity and rare surface area are the major technical obstacles. Herein, we demonstrated a honeycomb basis using carbon nanotubes (CNTs). The honeycomb-shaped carbon skeleton provides a relatively larger surface area to store more ions with a more stable and stronger structure to maintain long-term electrochemical tests. During MoS<subscript>2</subscript> fabrication, MoO<subscript>x</subscript> was also synthesized onto CNTs. MoO<subscript>x</subscript> influenced the electrochemical test results. Thermal annealing was conducted to remove the MoO<subscript>x</subscript> attachments to assure the optimal capacitance value. For the particular composite honeycomb structure (MoS<subscript>2</subscript>/CNTs) used in this research, the specific capacitance increased from 4.7 F/g (CNTs) to 75 F/g (MoS<subscript>2</subscript> + MoO<subscript>x</subscript>/CNTs), measured using cyclic voltammetry measurements. The specific capacitance further reached 425 F/g using thermal annealing at optimal temperature, 700 °C. The designed electrode materials demonstrated excellent electrochemical characteristics and had great potential for future electrochemical applications. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
21662746
Volume :
40
Issue :
3
Database :
Complementary Index
Journal :
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics
Publication Type :
Academic Journal
Accession number :
157003462
Full Text :
https://doi.org/10.1116/6.0001773