Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap.

We grow ²⁸Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtained by exposing the SiGe barrier to dichlorosilane at 500 °C. As a result, ²⁸Si/SiGe heterostructure field-effect transistors feature a sharp semiconductor/dielectric interface and support a two-dimensional electron gas with enhanced and more uniform transport properties across a 100 mm wafer. At T = 1.7 K, we measure a high mean mobility of (1.8 ± 0.5) × 10 5 cm²/V s and a low mean percolation density of (9 ± 1) × 10 10 cm⁻². From the analysis of Shubnikov–de Haas oscillations at T = 190 mK, we obtain a long mean single particle relaxation time of (8.1 ± 0.5) ps, corresponding to a mean quantum mobility and quantum level broadening of (7.5 ± 0.6) × 10 4 cm²/V s and (40 ± 3) μ eV , respectively, and a small mean Dingle ratio of (2.3 ± 0.2) , indicating reduced scattering from long range impurities and a low-disorder environment for hosting high-performance spin-qubits. [ABSTRACT FROM AUTHOR]