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Design of a α‐Fe2O3/SiC heterojunction to improve photocatalytic performance through a Z-scheme electronic transfer.

Authors :
Peng, Yuan
Guo, Xiaotong
Yang, Jingjing
Xie, Taiping
Wang, Jiankang
Wang, Yajing
Liu, Songli
Source :
Journal of Dispersion Science & Technology; 2022, Vol. 43 Issue 5, p629-638, 10p, 1 Black and White Photograph, 2 Diagrams, 7 Graphs
Publication Year :
2022

Abstract

A heterostructure α-Fe<subscript>2</subscript>O<subscript>3</subscript>/SiC (FS) was designed by depositing α-Fe<subscript>2</subscript>O<subscript>3</subscript> nanotubes on the surface of SiC through a facile hydrothermal method. Microstructure and photocatalytic activity of the hybrid were analyzed via various characterization techniques including XRD, TEM, UV–Vis DRS, PL, XPS, and electrochemical tests. The photocatalytic efficiencies of the α-Fe<subscript>2</subscript>O<subscript>3</subscript>/SiC heterojunction, individual SiC, and α-Fe<subscript>2</subscript>O<subscript>3</subscript> were evaluated by measuring photo-Fenton degradation and photocatalytic hydrogen production. The FS hybrid exhibited a much higher photocatalytic efficiency than the individual ones. The results revealed that the cooperation of α-Fe<subscript>2</subscript>O<subscript>3</subscript> and SiC led to synergy effects of the two separate semiconductors. The photocatalytic enhancement can be attributed to the strong light-harvesting capability, close contact interface, improved dispersion and predominant (104) active facet exposure of α-Fe<subscript>2</subscript>O<subscript>3</subscript>, as well as efficient electron-hole transfer and separation. The photocatalytic mechanism analysis reveals that the charge-carrier transportation of the α-Fe<subscript>2</subscript>O<subscript>3</subscript>/SiC heterojunction follows a direct Z-scheme preserving the high-energy electrons and holes. The photocatalytic charge-carrier transportation of the constructed α-Fe<subscript>2</subscript>O<subscript>3</subscript>/SiC heterojunction follows a direct Z-scheme preserving the high-energy electrons and holes. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
01932691
Volume :
43
Issue :
5
Database :
Complementary Index
Journal :
Journal of Dispersion Science & Technology
Publication Type :
Academic Journal
Accession number :
156189016
Full Text :
https://doi.org/10.1080/01932691.2020.1844734