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Noise Performance of 0.35-μm SOI CMOS Devices and Micropower Preamplifier Following 63-MeV, 1-Mrad (Si) Proton Trradiation.
- Source :
- IEEE Transactions on Nuclear Science; Dec2004 Part 2 of 3, Vol. 51 Issue 6, p3788-3794, 7p
- Publication Year :
- 2004
-
Abstract
- Total dose and single-event radiation hardness, and operation over extreme temperatures make silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) processes leading contenders for space applications. This paper re- ports noise degradation of 0.35-μm partially-depleted SOI CMOS devices and a micropower, low-noise preamplifier following 63-MeV proton irradiation to 1 Mrad (Si). Proton irradiation, relevant for space mission environments, was considered since it induces both ionizing and displacement damage. Preamplifier input-referred white-noise voltage was minimized at low power consumption by operating input devices in moderate inversion for high transconductance efficiency. Flicker-noise, important for gyros and other mission sensors having low-frequency outputs, was minimized by large-area pMOS input devices and careful management of noninput devices. Measured 1-Hz gate-referred, flicker-noise voltage density increased 24 and 32% for pMOS and nMOS test devices respectively following 1 Mrad (Si) irradiation. Measured 1-Hz input-referred noise voltage density increased 22% between a nonirradiated and radiated preamplifier sample, which agrees closely with the 24% increase expected since noise is dominated by pMOS input devices. Device small-signal transconductance and white-noise were largely unchanged while output conductance appeared to increase over a factor-of-three. This suggests a modest design margin is required to maintain flicker noise performance, while substantial design margin may be required to maintain open-loop voltage gain. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 51
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 15591589
- Full Text :
- https://doi.org/10.1109/TNS.2004.839151