Influence of Symmetric Underlap on Analog, RF and Power Applications for DG AlGaN/GaN MOS-HEMT.

MLA

Mitra, Rajrup, et al. “Influence of Symmetric Underlap on Analog, RF and Power Applications for DG AlGaN/GaN MOS-HEMT.” SILICON (1876990X), vol. 14, no. 5, Apr. 2022, pp. 2329–36. EBSCOhost, https://doi.org/10.1007/s12633-021-01039-x.

APA

Mitra, R., Roy, A., Mondal, A., & Kundu, A. (2022). Influence of Symmetric Underlap on Analog, RF and Power Applications for DG AlGaN/GaN MOS-HEMT. SILICON (1876990X), 14(5), 2329–2336. https://doi.org/10.1007/s12633-021-01039-x

Chicago

Mitra, Rajrup, Akash Roy, Arnab Mondal, and Atanu Kundu. 2022. “Influence of Symmetric Underlap on Analog, RF and Power Applications for DG AlGaN/GaN MOS-HEMT.” SILICON (1876990X) 14 (5): 2329–36. doi:10.1007/s12633-021-01039-x.