Back to Search
Start Over
Mitigating Total-Ionizing-Dose-Induced Threshold-Voltage Shifts Using Back-Gate Biasing in 22-nm FD-SOI Transistors.
Mitigating Total-Ionizing-Dose-Induced Threshold-Voltage Shifts Using Back-Gate Biasing in 22-nm FD-SOI Transistors.
- Source :
- IEEE Transactions on Nuclear Science; Mar2022, Vol. 69 Issue 3, p374-380, 7p
- Publication Year :
- 2022
-
Abstract
- The effects of total ionizing dose (TID) on MOSFETs fabricated in a 22-nm fully depleted silicon-on-insulator (FD-SOI) technology are analyzed. TID causes positive-trapped charge to accumulate in transistor isolation regions [e.g., the buried oxide (BOX)], thereby generating negative TID-induced threshold-voltage shifts $\Delta V_{\mathrm {th}}$ that facilitate nMOSFET turn-on and inhibit pMOSFET turn-on. Back-gate biasing options in the technology can be used to offset the threshold-voltage shifts. Applying a bias to the back gates of MOSFETs in a conventional-well back-gate configuration mitigates TID-induced $\Delta V_{\mathrm {th}}$ in nMOSFETs (where a negative bias is applied to the P-well back-gate), while enhancing the same in pMOSFETs (where a positive bias is applied to the N-well back-gate). To mitigate and potentially reverse TID-induced $\Delta V_{\mathrm {th}}$ of both nMOSFETs and pMOSFETs simultaneously, a single back-gate bias can be applied to MOSFETs in a common isolated P-well back-gate configuration. 3-D technology computer-aided design (3-D TCAD) device simulation results of the 22-nm FD-SOI technology confirm the conventional-well circuit-level radiation response and support the effectiveness of using the common isolated P-well back-gate configuration for TID mitigation. These results justify the utility of dynamically tuning back-gate bias according to actively monitored TID-induced $\Delta V_{\mathrm {th}}$ feedback. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 69
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 155866818
- Full Text :
- https://doi.org/10.1109/TNS.2022.3146318