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Se 和 Cd 掺杂 GaN 电子结构与光学性质的 第一性原理研究.

Authors :
马 磊
刘晨曦
潘多桥
雷博程
赵旭才
张丽丽
Source :
Electronic Components & Materials; Feb2022, Vol. 41 Issue 2, p149-156, 8p
Publication Year :
2022

Abstract

<i>Copyright of Electronic Components & Materials is the property of Electronic Components & Materials and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)

Details

Language :
Chinese
ISSN :
10012028
Volume :
41
Issue :
2
Database :
Complementary Index
Journal :
Electronic Components & Materials
Publication Type :
Academic Journal
Accession number :
155700691
Full Text :
https://doi.org/10.14106/j.cnki.1001-2028.2022.1590