Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs.

MLA

Lin, Qing, et al. “Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs.” IEEE Electron Device Letters, vol. 43, no. 3, Mar. 2022, pp. 490–93. EBSCOhost, https://doi.org/10.1109/LED.2022.3141692.

APA

Lin, Q., Pitner, G., Gilardi, C., Su, S.-K., Zhang, Z., Chen, E., Bandaru, P., Kummel, A., Wang, H., Passlack, M., Mitra, S., & Wong, H.-S. P. (2022). Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs. IEEE Electron Device Letters, 43(3), 490–493. https://doi.org/10.1109/LED.2022.3141692

Chicago

Lin, Qing, Gregory Pitner, Carlo Gilardi, Sheng-Kai Su, Zichen Zhang, Edward Chen, Prabhakar Bandaru, et al. 2022. “Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs.” IEEE Electron Device Letters 43 (3): 490–93. doi:10.1109/LED.2022.3141692.