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Iterative Programming of Noisy Memory Cells.
- Source :
- IEEE Transactions on Communications; Feb2022, Vol. 70 Issue 2, p769-782, 14p
- Publication Year :
- 2022
-
Abstract
- In this paper, we study a model that mimics the programming operation of memory cells. This model was first introduced by Lastras-Montano et al. for continuous-alphabet channels, and later by Bunte and Lapidoth for discrete memoryless channels (DMC). Under this paradigm we assume that cells are programmed sequentially and individually. The programming process is modeled as transmission over a channel, such that it is possible to read the cell state in order to determine its programming success, and in case of programming failure, to reprogram the cell again. Reprogramming a cell can reduce the bit error rate, however this comes with the price of increasing the overall programming time and thereby affecting the writing speed of the memory. An iterative programming scheme is an algorithm which specifies the number of attempts to program each cell. Given the programming channel and constraints on the average and maximum number of attempts to program a cell, we study programming schemes which maximize the number of bits that can be reliably stored in the memory. We extend the results by Bunte and Lapidoth and study this problem when the programming channel is either discrete-input memoryless symmetric channel (including the BSC,BEC, BI-AWGN) or the $Z$ channel. For the BSC and the BEC our analysis is also extended for the case where the error probabilities on consecutive writes are not necessarily the same. Lastly, we also study a related model which is motivated by the synthesis process of DNA molecules. [ABSTRACT FROM AUTHOR]
- Subjects :
- BIT error rate
DNA synthesis
ERROR probability
MEMORY
ION channels
Subjects
Details
- Language :
- English
- ISSN :
- 00906778
- Volume :
- 70
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Communications
- Publication Type :
- Academic Journal
- Accession number :
- 155334149
- Full Text :
- https://doi.org/10.1109/TCOMM.2021.3130660