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Mechanism of improving ferroelectric properties of BiFe0.98M0.02O3 (M = Zn, Al, Ti) polycrystalline films.

Authors :
Zhang, Guo-Dong
Dai, Jian-Qing
Zhang, Chang-Chang
Liang, Xia-Li
Source :
Journal of Sol-Gel Science & Technology; Feb2022, Vol. 101 Issue 2, p420-427, 8p
Publication Year :
2022

Abstract

Pure BiFeO<subscript>3</subscript> (BFO) and (Zn<superscript>2+</superscript>, Al<superscript>3+</superscript>, Ti<superscript>4+</superscript>) mono-doped BiFe<subscript>0.98</subscript>M<subscript>0.02</subscript>O<subscript>3</subscript> (M = Zn, Al, Ti) polycrystalline multiferroic films has been successfully synthesized on FTO/glass substrates via sol–gel spin-coating method. Effects of mono-doping with three different valence metal ions (Zn<superscript>2+</superscript>, Al<superscript>3+</superscript>, Ti<superscript>4+</superscript>) on crystalline structure, surface morphology, and electrical properties of BFO films were systematically investigated. X-ray diffraction (XRD) results show that BFO film samples mono-doped with Zn<superscript>2+</superscript>, Al<superscript>3+</superscript>, and Ti<superscript>4+</superscript> all have rhombic distorted perovskite structure of R3m space group, and no heterophases are produced. Scanning electron microscope (SEM) images reveal that microstructural density of BiFe<subscript>0.98</subscript>M<subscript>0.02</subscript>O<subscript>3</subscript> (M = Zn, Al, Ti) films is significantly increased compared to pure BFO. Furthermore leakage current densities of BiFe<subscript>0.98</subscript>M<subscript>0.02</subscript>O<subscript>3</subscript> (M = Zn, Al, Ti) films all reach up to the order of 10<superscript>−5</superscript> A/cm<superscript>2</superscript> under applied electric field of 150 kV/cm, that is about three orders of magnitude lower than pure BFO films. Greatly reduced leakage current density confers superior ferroelectric properties to BiFe<subscript>0.98</subscript>M<subscript>0.02</subscript>O<subscript>3</subscript> (M = Zn, Al, Ti) films, as evidenced by beautiful P–E hysteresis loops at room temperature for (Zn<superscript>2+</superscript>, Al<superscript>3+</superscript>, Ti<superscript>4+</superscript>) mono-doped BiFe<subscript>0.98</subscript>M<subscript>0.02</subscript>O<subscript>3</subscript> (M = Zn, Al, Ti) films and significantly higher double remnant polarization (2P<subscript>r</subscript> ~ 164.75–168.66 μC/cm<superscript>2</superscript>) values compared to pure BFO (102.36 μC/cm<superscript>2</superscript>). The significantly improved ferroelectric properties provide a new reference for the practical application of BFO film. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09280707
Volume :
101
Issue :
2
Database :
Complementary Index
Journal :
Journal of Sol-Gel Science & Technology
Publication Type :
Academic Journal
Accession number :
155313920
Full Text :
https://doi.org/10.1007/s10971-021-05702-y