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High-Tc Superconducting Memory Cell.
- Source :
- Journal of Superconductivity & Novel Magnetism; Feb2022, Vol. 35 Issue 2, p373-382, 10p
- Publication Year :
- 2022
-
Abstract
- In this paper, operational principles of a cryogenic memory cell that utilizes high-temperature superconductors (high-T<subscript>c</subscript>) are presented. Such a cell consists of three inductively coupled Josephson junctions coupled via inductors. Design and operational logic of this type of cell were recently introduced and demonstrated for low temperature 4 K environment. The basic memory cell operations (read, write, reset) can be implemented on the same simple circuit and both destructive and non-destructive memory cell operations can be realized. Here, we present the design principles and computational validation of basic memory cell operations (write, read, and reset) for the high-T<subscript>c</subscript> memory cell. Our results for the high-T<subscript>c</subscript> memory cell operations show very good resemblance with the previously presented low-temperature 4 K memory cell operations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15571939
- Volume :
- 35
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Journal of Superconductivity & Novel Magnetism
- Publication Type :
- Academic Journal
- Accession number :
- 155105079
- Full Text :
- https://doi.org/10.1007/s10948-021-06069-5