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Complexing Agent-Dependent Properties of Chemically Deposited Tin Antimony Sulphide Thin Films for Use in Sustainable Energy Devices.
- Source :
- Journal of Electronic Materials; Mar2022, Vol. 51 Issue 3, p1148-1162, 15p
- Publication Year :
- 2022
-
Abstract
- Complexing agents are important in the control of chemical kinetics. Thin films of tin antimony sulphide (Sn<subscript>2</subscript>Sb<subscript>2</subscript>S<subscript>5</subscript>) were deposited on glass substrates and the effect of different complexing agents [tri-sodium citrate (Na<subscript>3</subscript>C<subscript>6</subscript>H<subscript>5</subscript>O<subscript>7</subscript>) and tartaric acid (C<subscript>4</subscript>H<subscript>6</subscript>O<subscript>6</subscript>)] on their properties were investigated. X-ray diffractometry studies indicate that the films crystallized in an orthorhombic structure. Films grown with Na<subscript>3</subscript>C<subscript>6</subscript>H<subscript>5</subscript>O<subscript>7</subscript> exhibited increased texturing and higher crystallite size (16.6–22.1 nm), while that of C<subscript>4</subscript>H<subscript>6</subscript>O<subscript>6</subscript> was between 16.80 and 20.0 nm. Energy dispersive spectroscopy studies reveal that the antimony/sulfur ratio increased with an increase in the tin content in the former and decreased with an increase in the tin content in the latter. X-ray photoelectron spectroscopy studies confirmed the formation of Sn<subscript>2</subscript>Sb<subscript>2</subscript>S<subscript>5</subscript> films. Scanning electron microscopy analysis shows morphological evolution from seed-like to block-like structures in Na<subscript>3</subscript>C<subscript>6</subscript>H<subscript>5</subscript>O<subscript>7</subscript>and a seed-like structure in the C<subscript>4</subscript>H<subscript>6</subscript>O<subscript>6</subscript> environments. Optical spectroscopy results indicated that the films possess optical absorption coefficient (α) > 10<superscript>4</superscript> cm<superscript>-1</superscript>and a direct energy band gap that exhibited the classic Burstein-Moss shift. The energy band gap and the processing parameters fit into a quadratic model with high values of R<superscript>2</superscript>. The electrical properties from Hall effect studies give typical semiconductor properties of Sn<subscript>2</subscript>Sb<subscript>2</subscript>S<subscript>5</subscript> in a range suitable for use in sustainable energy devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03615235
- Volume :
- 51
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Journal of Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 155077732
- Full Text :
- https://doi.org/10.1007/s11664-021-09376-8