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Concurrent Structural and Electronic Phase Transitions in V2O3 Thin Films with Sharp Resistivity Change.
- Source :
- Chinese Physics Letters; Jul2021, Vol. 38 Issue 7, p1-10, 10p
- Publication Year :
- 2021
-
Abstract
- The relationship between structural and electronic phase transitions in V<subscript>2</subscript>O<subscript>3</subscript> thin films is of critical importance for understanding of the mechanism behind metal–insulator transition (MIT) and related technological applications. Despite being extensively studied, there are currently no clear consensus and picture of the relation between structural and electronic phase transitions so far. Using V<subscript>2</subscript>O<subscript>3</subscript> thin films grown on r-plane Al<subscript>2</subscript>O<subscript>3</subscript> substrates, which exhibit abrupt MIT and structural phase transition, we show that the electronic phase transition occurs concurrently with the structural phase transition as revealed by the electrical transport and Raman spectra measurements. Our result provides experimental evidence for clarifying this issue, which could form the basis of theoretical studies as well as technological applications in V<subscript>2</subscript>O<subscript>3</subscript>. [ABSTRACT FROM AUTHOR]
- Subjects :
- THIN films
PHASE transitions
METAL-insulator transitions
RAMAN spectroscopy
Subjects
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 38
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 154862643
- Full Text :
- https://doi.org/10.1088/0256-307X/38/7/077103