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Impact of Heavy-Ion Irradiation in an 80-V Radiation-Hardened Split-Gate Trench Power UMOSFET.
Impact of Heavy-Ion Irradiation in an 80-V Radiation-Hardened Split-Gate Trench Power UMOSFET.
- Source :
- IEEE Transactions on Electron Devices; Feb2022, Vol. 69 Issue 2, p664-668, 5p
- Publication Year :
- 2022
-
Abstract
- In this work, the single-event burnout (SEB) and degradation behaviors induced by heavy-ion irradiation were investigated in an 80-V-rated SEB-hardened split-gate trench (SGT) power U-shaped metal-oxide-semiconductor field-effect transistor (UMOSFET). After SEB hardening, the SEB failure threshold voltage of the sample device was measured to be 90 V; furthermore, a permanent degradation of the drain leakage or gate leakage was found after irradiation when the reverse voltage exceeded 60 V. The simulation results demonstrate that the heavy-ion-induced transient high temperature is a common mechanism responsible for the severe degradation and the catastrophic SEB. In addition, an effective method to improve the degradation and SEB tolerances, which enhances the rated breakdown voltage of a device, was proven through simulations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 69
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 154861900
- Full Text :
- https://doi.org/10.1109/TED.2021.3135369