Optimization of LPCVD phosphorous-doped SiGe thin films for CMOS-compatible thermoelectric applications.

MLA

Schwinge, Caroline, et al. “Optimization of LPCVD Phosphorous-Doped SiGe Thin Films for CMOS-Compatible Thermoelectric Applications.” Applied Physics Letters, vol. 120, no. 3, Jan. 2022, pp. 1–6. EBSCOhost, https://doi.org/10.1063/5.0076945.

APA

Schwinge, C., Kühnel, K., Emara, J., Roy, L., Biedermann, K., Weinreich, W., Kolodinski, S., Wiatr, M., Gerlach, G., & Wagner-Reetz, M. (2022). Optimization of LPCVD phosphorous-doped SiGe thin films for CMOS-compatible thermoelectric applications. Applied Physics Letters, 120(3), 1–6. https://doi.org/10.1063/5.0076945

Chicago

Schwinge, Caroline, Kati Kühnel, Jennifer Emara, Lisa Roy, Kati Biedermann, Wenke Weinreich, Sabine Kolodinski, Maciej Wiatr, Gerald Gerlach, and Maik Wagner-Reetz. 2022. “Optimization of LPCVD Phosphorous-Doped SiGe Thin Films for CMOS-Compatible Thermoelectric Applications.” Applied Physics Letters 120 (3): 1–6. doi:10.1063/5.0076945.