INFLUENCES OF MATERIAL SOURCE, WAFER PROCESS AND LOCATION ON SILICON DIE FRACTURE STRENGTH.

Authors :: Liu, D. S.
Shih, Y. S.
Ni, C. Y.
Chiou, D. Y.
Chung, C. L.
Huang, M. L.
Source :: Experimental Techniques; Nov/Dec2002, Vol. 26 Issue 6, p29-35, 7p, 3 Black and White Photographs, 2 Diagrams, 2 Charts, 4 Graphs
Publication Year :: 2002
Abstract: Investigates the external factors that influenced die fracture strength using three-point bending test and statistical analysis. Causes of fracture modes for the die samples; Factors that contributed to the variations in die fracture strength; Comparison between the effects of wafers fabricated with electrical circuits and raw wafers on die fracture strength and strength variations.

Subjects :: FRACTURE mechanics
BENDING (Metalwork)
TESTING
STRENGTH of materials
SEMICONDUCTOR wafers
ELECTRIC circuits

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