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HCl-doped poly (para-nitro aniline-co-para-toluidine) thin film as a gamma ray dosimeter.

Authors :
Diab, H. M.
Ibrahim, A.
El Azab, I. H.
Abdel-Aziz, M. H.
Zoromba, M. Sh.
Bassyouni, M.
Al-Hossainy, A. F.
El-Attar, S. A.
Source :
Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena; Sep/Oct 2021, Vol. 176 Issue 9/10, p940-954, 15p
Publication Year :
2021

Abstract

A semiconductor copolymer, HCl doped poly (para-nitro aniline-co-para-toluidine) [DPPNPT] was prepared by oxidative polymerization route in an acidic medium. The structural properties of the copolymer were characterized by several techniques. Physical vapor deposition technique was used for fabrication of the copolymer thin film [DPPNPT]<superscript>TF</superscript> of 100 nm thickness. Material studio 7.0 was calculated with the density functional theory (DFT), geometrical trials including the highest molecular orbits (HOMOs), the lowest unoccupied molecular orbitals (LIMOs), and the other active parameters were obtained. The optical parameters have demonstrated that the thin film has a high absorption range of 2 to 6 eV. Dosimetric properties are considered as another utilization of DPPNPT thin film. Thermoluminescence (TL) properties such as glow curves, different gamma doses response, and dose fading nature were tested. Thermoluminescence examinations of DPPNPT gamma-irradiated showed a single strong TL glow peak located at 350°C. Three unresoluted glow peaks of the [DPPNPT]<superscript>TF</superscript> films after gamma irradiation have been obtained. A linear correlation was obtained in the response curve start with 0.01Gy and extended to 2Gy. The total integral value of the TL signal showed a fixation through one month of storage of the DPPNPT compound. TL kinetics in deep traps were used to calculate resolute peaks activation energies. Based on obtained results the [DPPNPT]<superscript>TF</superscript> films are a good candidate for detection and monitoring personal gamma-ray doses. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10420150
Volume :
176
Issue :
9/10
Database :
Complementary Index
Journal :
Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena
Publication Type :
Academic Journal
Accession number :
154077483
Full Text :
https://doi.org/10.1080/10420150.2021.1985119