Suspended MoTe2 field effect transistors with ionic liquid gate.

Authors :: Choi, W. R.
Hong, J. H.
You, Y. G.
Campbell, E. E. B.
Jhang, S. H.
Source :: Applied Physics Letters; 11/29/2021, Vol. 119 Issue 22, p1-5, 5p
Publication Year :: 2021
Abstract: The electrical performance of suspended few-layer MoTe<subscript>2</subscript> field-effect-transistors with ionic liquid gating has been investigated. The suspended structure not only enhances the mobility of MoTe<subscript>2</subscript> by removing the influence of the substrate but also allows ions to accumulate on both the top and the bottom surface of MoTe<subscript>2</subscript>. The consequent increase in the gate capacitance resulted in an improved subthreshold swing (∼73 mV/dec) and on–off ratio (10<superscript>6</superscript>) at room temperature for suspended MoTe<subscript>2</subscript> compared to substrate-supported devices. Suspended transistors with ionic liquid gating enable a larger charge density compared to ionic liquid gated supported devices and may provide a useful platform to study screening physics in 2D materials. [ABSTRACT FROM AUTHOR]