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High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition.
- Source :
- AIP Advances; Nov2021, Vol. 11 Issue 11, p1-6, 6p
- Publication Year :
- 2021
-
Abstract
- Nitrogen-polar (N-polar) III-nitride has natural advantages in the fabrication of electronic devices. In this work, unintentionally doped N-polar GaN films were grown on sapphire substrates by metalorganic chemical vapor deposition. By optimizing the growth parameters including growth temperature, pressure, and V/III ratio, N-polar GaN with a relatively high sheet resistivity of 3.6 × 10<superscript>5</superscript> Ω/sq was achieved. The secondary ion mass spectroscopy and x-ray diffraction measurement results demonstrate that the increased carbon impurity concentration is primarily responsible for the high resistivity. Moreover, N-polar GaN/Al<subscript>0.25</subscript>Ga<subscript>0.75</subscript>N heterojunctions were deposited on the high-resistivity N-polar GaN template. An extremely high-density two-dimensional electron gas of up to 1.12 × 10<superscript>13</superscript> cm<superscript>−2</superscript> was realized at the interface between the Al<subscript>0.25</subscript>Ga<subscript>0.75</subscript>N and the GaN. It is reasonably believed that the experimental results obtained here are beneficial for the development of high-performance N-polar GaN-based electronic devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 11
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- 153907858
- Full Text :
- https://doi.org/10.1063/5.0063784