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Aging-Aware Gate-Level Modeling for Circuit Reliability Analysis.

Authors :
Zhang, Zuodong
Wang, Runsheng
Shen, Xuguang
Wu, Dehuang
Zhang, Jiayang
Zhang, Zhe
Wang, Joddy
Huang, Ru
Source :
IEEE Transactions on Electron Devices; Sep2021, Vol. 68 Issue 9, p4201-4207, 7p
Publication Year :
2021

Abstract

Due to severer transistor aging at nanoscale, circuit design margin becomes extremely tight for advanced technology nodes. Thus, reliability-aware circuit design is urgently needed. In this article, a new framework to perform aging-aware static timing analysis (STA) is presented for reliability analysis. The key parts of aging-aware STA flows are workload analysis and aged delay/transition calculation. For the workload analysis, a new analytical stress probability (SP) calculation model is proposed, which considers the floating effect and signal correlations. For aged delay/transition calculation, a new aging-aware model is developed, which is accessible to large industrial libraries. The results show that the proposed model achieves high accuracy in the degradation estimation and aged-path-delay calculation. Due to its high accuracy and scalability, the proposed framework is a promising solution that is compatible with commercial Electronic Design Automation (EDA) tools. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189383
Volume :
68
Issue :
9
Database :
Complementary Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
153763926
Full Text :
https://doi.org/10.1109/TED.2021.3096171