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Strain engineering of quasi-1D layered TiS3 nanosheets toward giant anisotropic Raman and piezoresistance responses.

Authors :
Qin, Jing-Kai
Sun, Hai-Lin
Su, Tong
Zhao, Weiwei
Zhen, Liang
Chai, Yang
Xu, Cheng-Yan
Source :
Applied Physics Letters; 11/15/2021, Vol. 119 Issue 20, p1-6, 6p
Publication Year :
2021

Abstract

Quasi-one-dimensional layered TiS<subscript>3</subscript> nanosheets possess highly anisotropic physical properties. Herein, we reported the anisotropic strain response of Raman and the piezoresistance effect in layered TiS<subscript>3</subscript> nanosheets. An attractive Grüneisen parameter ( γ m ) of 5.82 was achieved for A g III mode in the b-axis strained TiS<subscript>3</subscript> nanosheet, while a negligible value of γ m was obtained when the strain is applied along the a-axis direction. We also revealed the opposite piezoresistive effect with strains applied along the two principal axes, demonstrating a gauge factor ratio of approximately −1:3.2. The giant anisotropy is attributed to the strain modulated bandgap, which was further confirmed by density functional theory calculations. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
119
Issue :
20
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
153686264
Full Text :
https://doi.org/10.1063/5.0069569