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Overactivated transport in the localized phase of the superconductor-insulator transition.

Authors :
Humbert, V.
Ortuño, M.
Somoza, A. M.
Bergé, L.
Dumoulin, L.
Marrache-Kikuchi, C. A.
Source :
Nature Communications; 11/18/2021, Vol. 12 Issue 1, p1-10, 10p
Publication Year :
2021

Abstract

Beyond a critical disorder, two-dimensional (2D) superconductors become insulating. In this Superconductor-Insulator Transition (SIT), the nature of the insulator is still controversial. Here, we present an extensive experimental study on insulating Nb<subscript>x</subscript>Si<subscript>1−x</subscript> close to the SIT, as well as corresponding numerical simulations of the electrical conductivity. At low temperatures, we show that electronic transport is activated and dominated by charging energies. The sample thickness variation results in a large spread of activation temperatures, fine-tuned via disorder. We show numerically and experimentally that this originates from the localization length varying exponentially with thickness. At the lowest temperatures, there is an increase in activation energy related to the temperature at which this overactivated regime is observed. This relation, observed in many 2D systems shows that conduction is dominated by single charges that have to overcome the gap when entering superconducting grains. Despite extensive work on the superconductor-insulator transition in two-dimensional materials, the nature of the insulator is still debated. The authors report measurements and simulations of NbxSi1–x films, showing that conduction in the insulating state occurs by single charges hopping between superconducting grains. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20411723
Volume :
12
Issue :
1
Database :
Complementary Index
Journal :
Nature Communications
Publication Type :
Academic Journal
Accession number :
153651327
Full Text :
https://doi.org/10.1038/s41467-021-26911-7