Anisotropic Optoelectronic Properties of MAPbI3 on (100), (112) and (001) Facets.

Large-size single crystals of MAPbI₃ were grown using inverse temperature crystallization. The crystalline anisotropy is important for understanding, designing and controlling the growth and properties of MAPbI₃ series materials. The optoelectronic performances using MAPbI₃ crystals with three different orientations of (100), (112) and (001) were studied, which revealed the anisotropic optoelectronic properties. The responsivity of the (112) facet of MAPbI₃ reaches 7.08 mA/W which shows excellent optoelectronic properties. [ABSTRACT FROM AUTHOR]