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Theoretical Studies of Electronic and Optical Properties of Bixbyite and Fluorite Polymorphs of Sb-Doped Y2O3.

Authors :
Naveed-Ul-Haq, M.
Source :
Journal of Electronic Materials; Dec2021, Vol. 50 Issue 12, p6784-6794, 11p
Publication Year :
2021

Abstract

Sb-doped Y<subscript>2</subscript>O<subscript>3</subscript>, a compound with excellent optical properties, is used in laser applications. Recently, it has been found that it coexists in two distinct polymorphs upon doping with various levels of Sb. Therefore, the electronic structure and optical properties of Sb-doped Y<subscript>2</subscript>O<subscript>3</subscript> corresponding to two distinct phases, i.e., bixbyite and fluorite, are explored in this paper using the CASTEP density functional theory (DFT) code. Sb is substituted at Y sites in pure Y<subscript>2</subscript>O<subscript>3</subscript> in both phases, and the corresponding band structure, density of states, and various optical properties, namely the dielectric function, refractive index, reflectivity, and optical loss functions, are investigated. The results reveal that Sb-doped Y<subscript>2</subscript>O<subscript>3</subscript> in fluorite phase is conductive for 12.5% doping but shows a small gap of 0.45 eV in the case of 25% Sb doping. Moreover, the fluorite phase of Sb-doped Y<subscript>2</subscript>O<subscript>3</subscript> has defect states in the bandgap above the Fermi level, while the bixbyite phase exhibits insulating behavior. Moreover, the bandgap of the bixbyite phase steadily decreases with increasing Sb doping concentration. The results for the optical properties reveal that new kinds of excitation and plasmonic states emerge in Sb-doped bixbyite Y<subscript>2</subscript>O<subscript>3</subscript> whereas no such transitions appear upon doping of the fluorite structure. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03615235
Volume :
50
Issue :
12
Database :
Complementary Index
Journal :
Journal of Electronic Materials
Publication Type :
Academic Journal
Accession number :
153585660
Full Text :
https://doi.org/10.1007/s11664-021-09185-z