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Performance enhancement of charge plasma-based junctionless TFET (JL-TFET) using stimulated n-pocket and heterogeneous gate dielectric.
- Source :
- Nanotechnology; 8/13/2021, Vol. 32 Issue 33, p1-9, 9p
- Publication Year :
- 2021
-
Abstract
- Junctionless tunneling field-effect transistor (JL-TFET) is an excellent potential alternative to conventional MOSFET and TFET due to the lack of a steep doping profile, which makes it easier to fabricate. JL-TFET not only offers a lower subthreshold swing (SS) compared to MOSFET, but mitigates the low on-current problem associated with conventional TFET. The DC and analog characteristics of JL-TFET can be further improved by design modifications. In this research, we have presented two novel structures of JL-TFET: stimulated n-pocket JL-TFET (SNPJL-TFET) and SNPJL-TFET with heterogeneous gate dielectric. The performance of these devices has been gauged against conventional JL-TFET. Both novel structures exhibit excellent performance including point SS around 20 mV/dec, high I<subscript>ON</subscript>/I<subscript>OFF</subscript> in the order of 10<superscript>14</superscript> and lower threshold voltage (V<subscript>T</subscript>). By analyzing RF and linearity parameters such as the transconductance generation factor, F<subscript>T</subscript>, transit time, total factor productivity, second-order voltage intercept point, third-order voltage intercept point, third-order input intercept point and third-order intermodulation distortion, it is observed that the proposed devices are more suitable for RF applications since they show superiority in most of the analyzed parameters. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574484
- Volume :
- 32
- Issue :
- 33
- Database :
- Complementary Index
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 153474052
- Full Text :
- https://doi.org/10.1088/1361-6528/abec07