Enhanced absorption process in the thin active region of GaAs based p–i–n structure.

MLA

Yue, Chen, et al. “Enhanced Absorption Process in the Thin Active Region of GaAs Based P–i–n Structure.” Chinese Physics B, vol. 30, no. 9, Sept. 2021, pp. 1–5. EBSCOhost, https://doi.org/10.1088/1674-1056/abf10c.

APA

Yue, C., Tang, X.-S., Li, Y.-F., Wang, W.-Q., Li, X.-X., Zhang, J.-Y., Deng, Z., Du, C.-H., Jia, H.-Q., Wang, W.-X., Lu, W., Jiang, Y., & Chen, H. (2021). Enhanced absorption process in the thin active region of GaAs based p–i–n structure. Chinese Physics B, 30(9), 1–5. https://doi.org/10.1088/1674-1056/abf10c

Chicago

Yue, Chen, Xian-Sheng Tang, Yang-Feng Li, Wen-Qi Wang, Xin-Xin Li, Jun-Yang Zhang, Zhen Deng, et al. 2021. “Enhanced Absorption Process in the Thin Active Region of GaAs Based P–i–n Structure.” Chinese Physics B 30 (9): 1–5. doi:10.1088/1674-1056/abf10c.