Electronic Transport Mechanisms Correlated to Structural Properties of a Reduced Graphene Oxide Sponge.

We report morpho-structural properties and charge conduction mechanisms of a foamy "graphene sponge", having a density as low as ≈0.07 kg/m 3 and a carbon to oxygen ratio C:O ≃ 13:1. The spongy texture analysed by scanning electron microscopy is made of irregularly-shaped millimetres-sized small flakes, containing small crystallites with a typical size of ≃16.3 nm. A defect density as high as ≃2.6 × 10 11 cm − 2 has been estimated by the Raman intensity of D and G peaks, dominating the spectrum from room temperature down to ≃153 K. Despite the high C:O ratio, the graphene sponge exhibits an insulating electrical behavior, with a raise of the resistance value at ≃6 K up to 5 orders of magnitude with respect to the room temperature value. A variable range hopping (VRH) conduction, with a strong 2D character, dominates the charge carriers transport, from 300 K down to 20 K. At T < 20 K, graphene sponge resistance tends to saturate, suggesting a temperature-independent quantum tunnelling. The 2D-VRH conduction originates from structural disorder and is consistent with hopping of charge carriers between s p 2 defects in the plane, where s p 3 clusters related to oxygen functional groups act as potential barriers. [ABSTRACT FROM AUTHOR]