Back to Search
Start Over
Negative Impact of Compressive Biaxial Stress on High Precision Bipolar Devices.
- Source :
- IEEE Transactions on Components, Packaging & Manufacturing Technology; Aug2021, Vol. 11 Issue 8, p1310-1312, 3p
- Publication Year :
- 2021
-
Abstract
- Some packaging technologies of electronic devices introduce compressive biaxial stress and variable vertical stress. In unipolar MOS devices, stress variations typically only linearly affect drain current via carrier mobility. Collector currents of bipolar devices are additionally affected by variations in intrinsic carrier concentration. This leads to increased variability of key device parameters in the compressive stress regime. Reducing package-induced compressive stress, or inducing tensile stress, should improve device variability due to local stress variations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 21563950
- Volume :
- 11
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Components, Packaging & Manufacturing Technology
- Publication Type :
- Academic Journal
- Accession number :
- 153153721
- Full Text :
- https://doi.org/10.1109/TCPMT.2021.3095670