Demonstration of Avalanche and Surge Current Robustness in GaN Junction Barrier Schottky Diode With 600-V/10-A Switching Capability.

MLA

Zhou, Feng, et al. “Demonstration of Avalanche and Surge Current Robustness in GaN Junction Barrier Schottky Diode With 600-V/10-A Switching Capability.” IEEE Transactions on Power Electronics, vol. 36, no. 11, Nov. 2021, pp. 12163–67. EBSCOhost, https://doi.org/10.1109/TPEL.2021.3076694.

APA

Zhou, F., Xu, W., Ren, F., Zhou, D., Chen, D., Zhang, R., Zheng, Y., Zhu, T., & Lu, H. (2021). Demonstration of Avalanche and Surge Current Robustness in GaN Junction Barrier Schottky Diode With 600-V/10-A Switching Capability. IEEE Transactions on Power Electronics, 36(11), 12163–12167. https://doi.org/10.1109/TPEL.2021.3076694

Chicago

Zhou, Feng, Weizong Xu, Fangfang Ren, Dong Zhou, Dunjun Chen, Rong Zhang, Youdou Zheng, Tinggang Zhu, and Hai Lu. 2021. “Demonstration of Avalanche and Surge Current Robustness in GaN Junction Barrier Schottky Diode With 600-V/10-A Switching Capability.” IEEE Transactions on Power Electronics 36 (11): 12163–67. doi:10.1109/TPEL.2021.3076694.