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A Charge-Domain Scalable-Weight In-Memory Computing Macro With Dual-SRAM Architecture for Precision-Scalable DNN Accelerators.

Authors :
Lee, Eunyoung
Han, Taeyoung
Seo, Donguk
Shin, Gicheol
Kim, Jaerok
Kim, Seonho
Jeong, Soyoun
Rhe, Johnny
Park, Jaehyun
Ko, Jong Hwan
Lee, Yoonmyung
Source :
IEEE Transactions on Circuits & Systems. Part I: Regular Papers; Aug2021, Vol. 68 Issue 8, p3305-3316, 12p
Publication Year :
2021

Abstract

This paper presents a charge-domain in-memory computing (IMC) macro for precision-scalable deep neural network accelerators. The proposed Dual-SRAM cell structure with coupling capacitors enables charge-domain multiply and accumulate (MAC) operation with variable-precision signed weights. Unlike prior charge-domain IMC macros that only support binary neural networks or digitally compute weighted sums for MAC operation with multi-bit weights, the proposed macro implements analog weighted sums for energy-efficient bit-scalable MAC operations with a novel series-coupled merging scheme. A test chip with a 16-kb SRAM macro is fabricated in 28-nm FDSOI process, and the measured macro throughput is 125.2-876.5 GOPS for weight bit-precision varying from 2 to 8. The macro also achieves energy efficiency ranging from 18.4 TOPS/W for 8–b weight to 119.2 TOPS/W for 2-b weight. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
15498328
Volume :
68
Issue :
8
Database :
Complementary Index
Journal :
IEEE Transactions on Circuits & Systems. Part I: Regular Papers
Publication Type :
Periodical
Accession number :
153067153
Full Text :
https://doi.org/10.1109/TCSI.2021.3080042