Low power high performance CMOS amplifier for epileptic seizure prediction.

For neural recording applications, a low power neural signal acquisition amplifier has been proposed. Since extracellular neural signals are weak in amplitude and low in frequency, amplification of these signals with less noise and low power is a must for epilepsy prediction. The proposed amplifier employs anti parallel diode connected PMOS transistors as pseudo resistors to realize low frequency high pass function (LFHPF), Transconductance (g_m - boosted) Low Noise Amplifier to achieve high gain and Gm-C LPF to select the desired band of neural signals. The proposed amplifier achieves a gain of 44.6 dB with 61.75% reduction in power consumption and 1 µV/ Hz less input referred noise compared to the conventional amplifier. These results have been authorized using the cadence spectre trainer with CMOS 180 nm. A greater part of driven based rectifier is used as MOSFET to supply adequate power, as this structure can be made fully implantable. Hence, the neural amplifier can be made compatible with a wireless programmable, implantable neural recording micro system. [ABSTRACT FROM AUTHOR]