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Amorphization driven Na-alloying in SixGe1−x alloy nanowires for Na-ion batteries.

Authors :
Abdul Ahad, Syed
Kilian, Seamus
Zubair, Maria
Lebedev, Vasily A.
McNamara, Karrina
Ryan, Kevin M.
Kennedy, Tadhg
Geaney, Hugh
Source :
Journal of Materials Chemistry A; 9/28/2021, Vol. 9 Issue 36, p20626-20634, 9p
Publication Year :
2021

Abstract

Here we report the use of 1D Si<subscript>x</subscript>Ge<subscript>1−x</subscript> (x = 0.25, 0.5, 0.75) alloy nanowires (NWs) as anode materials for Na-ion batteries (NIBs). The strategy involves the synthesis of crystalline Si<subscript>x</subscript>Ge<subscript>1−x</subscript> NWs via the solution–liquid–solid (SLS) mechanism, followed by amorphization to activate the material for Na-ion cycling within a NIB. This study demonstrates the successful activation of Si<subscript>x</subscript>Ge<subscript>1−x</subscript> amorphous NW alloys, with a-Si<subscript>0.5</subscript>Ge<subscript>0.5</subscript> delivering 250 mA h g<superscript>−1</superscript> as compared to a-Ge NWs delivering only 107 mA h g<superscript>−1</superscript> after 100 cycles. Also, amorphization proved to be a critical step, since crystalline NWs failed to activate in NIBs. However, Si NWs performed poorly during Na-ion cycling even after amorphization, and this behavior was explained by poor comparative Na-ion diffusivity. Further investigations on the impact of the relative content of Ge within the amorphized Si<subscript>x</subscript>Ge<subscript>1−x</subscript> NWs, Na-ion diffusivity and electrode degradation during cycling were also performed. Notably, the incorporation of Ge in the a-Si<subscript>x</subscript>Ge<subscript>1−x</subscript> alloy boosted Na ion diffusivity in the amorphized alloy, resulting in improved cycling performance and rate capability as compared to parent a-Si and a-Ge NWs. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20507488
Volume :
9
Issue :
36
Database :
Complementary Index
Journal :
Journal of Materials Chemistry A
Publication Type :
Academic Journal
Accession number :
152553355
Full Text :
https://doi.org/10.1039/d1ta03741b