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Halogen‐Bonded Hole‐Transport Material Suppresses Charge Recombination and Enhances Stability of Perovskite Solar Cells.

Authors :
Canil, Laura
Salunke, Jagadish
Wang, Qiong
Liu, Maning
Köbler, Hans
Flatken, Marion
Gregori, Luca
Meggiolaro, Daniele
Ricciarelli, Damiano
De Angelis, Filippo
Stolterfoht, Martin
Neher, Dieter
Priimagi, Arri
Vivo, Paola
Abate, Antonio
Source :
Advanced Energy Materials; 9/16/2021, Vol. 11 Issue 35, p1-9, 9p
Publication Year :
2021

Abstract

Interfaces play a crucial role in determining perovskite solar cells, (PSCs) performance and stability. It is therefore of great importance to constantly work toward improving their design. This study shows the advantages of using a hole‐transport material (HTM) that can anchor to the perovskite surface through halogen bonding (XB). A halo‐functional HTM (PFI) is compared to a reference HTM (PF), identical in optoelectronic properties and chemical structure but lacking the ability to form XB. The interaction between PFI and perovskite is supported by simulations and experiments. XB allows the HTM to create an ordered and homogenous layer on the perovskite surface, thus improving the perovskite/HTM interface and its energy level alignment. Thanks to the compact and ordered interface, PFI displays increased resistance to solvent exposure compared to its not‐interacting counterpart. Moreover, PFI devices show suppressed nonradiative recombination and reduced hysteresis, with a Voc enhancement of ≥20 mV and a remarkable stability, retaining more than 90% efficiency after 550 h of continuous maximum‐power‐point tracking. This work highlights the potential that XB can bring to the context of PSCs, paving the way for a new halo‐functional design strategy for charge‐transport layers, which tackles the challenges of charge transport and interface improvement simultaneously. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
16146832
Volume :
11
Issue :
35
Database :
Complementary Index
Journal :
Advanced Energy Materials
Publication Type :
Academic Journal
Accession number :
152492955
Full Text :
https://doi.org/10.1002/aenm.202101553