A carrier escape study from InP/InGaAs single quantum well solar cells.

Authors :: Epler, J.
Pate, M.
Zachariou, A.
Barnes, J.
Barnham, K. W. J.
Nelson, J.
Tsui, E. S. M.
Source :: Journal of Applied Physics; 1/15/1998, Vol. 83 Issue 2, p877, 5p, 1 Chart, 7 Graphs
Publication Year :: 1998
Abstract: Looks at a carrier escape study from InP/AlGaAs single quantum well structures. Indications of the photoluminescence from the InGaAs wells; Use of an estimated nonradiative efficiency of the device; Insight on the relevance to an application.

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