Improving the electrical properties of TiOx Schottky-type diode with an extra ZrO2 insulating layer.

Authors :: Fu, Liping
Song, Xiaoqiang
Li, Yonggang
Wu, Zewei
Fan, Xiaolong
Gao, Xiaoping
Source :: Modern Physics Letters B; 8/30/2021, Vol. 35 Issue 24, p1-7, 7p
Publication Year :: 2021
Abstract: Titanium oxide has been considered a promising candidate for Schottky-type diode application. In this paper, an alternative approach for improving electrical properties of TiO x -based Schottky-type diode has been demonstrated. Compared with the Ag/TiO x /Ti structure Schottky-type diode, by embedding an extra ZrO<subscript>2</subscript> insulating layer between the Ag/TiO x interface, an extremely high rectifying ratio of 10<superscript>9</superscript> can be obtained in the Ag/ZrO<subscript>2</subscript>/TiO x /Ti structure device. The improvement of the electrical properties in the Ag/ZrO<subscript>2</subscript>/TiO x /Ti structure device can be attributed to the localized formation of Ag metal conductive filaments in ZrO<subscript>2</subscript> layer after switching on. [ABSTRACT FROM AUTHOR]

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