Enhanced Photoluminescence and Photoresponsiveness of Eu3+ Ions‐Doped CsPbCl3 Perovskite Quantum Dots under High Pressure.

Metal halide perovskite quantum dots (QDs) have garnered tremendous attention in optoelectronic devices owing to their excellent optical and electrical properties. However, these perovskite QDs are plagued by pressure‐induced photoluminescence (PL) quenching, which greatly restricts their potential applications. Herein, the unique optical and electrical properties of Eu3+‐doped CsPbCl3 QDs under high pressure are reported. Intriguingly, the PL of Eu3+ ions displays an enhancement with pressure up to 10.1 GPa and still preserves a relatively high intensity at 22 GPa. The optical and structural analysis indicates that the sample experiences an isostructural phase transition at approximately 1.53 GPa, followed by an amorphous state evolution, which is simulated and confirmed through density functional theory calculations. The pressure‐induced PL enhancement of Eu3+ ions can be associated with the enhanced energy transfer rate from excitonic state to Eu3+ ions. The photoelectric performance is enhanced by compression and can be preserved upon the release of pressure, which is attributed to the decreased defect density and increased carrier mobility induced by the high pressure. This work enriches the understanding of the high‐pressure behavior of rare‐earth‐doped luminescent materials and proves that high pressure technique is a promising way to design and realize superior optoelectronic materials. [ABSTRACT FROM AUTHOR]