Resistive Switching Properties of ZrO2 Film by Plasma-Enhanced Atomic Layer Deposition for Non-volatile Memory Applications.

MLA

Sivkov, Aleksey A., et al. “Resistive Switching Properties of ZrO2 Film by Plasma-Enhanced Atomic Layer Deposition for Non-Volatile Memory Applications.” Journal of Electronic Materials, vol. 50, no. 9, Sept. 2021, pp. 5396–401. EBSCOhost, https://doi.org/10.1007/s11664-021-09065-6.

APA

Sivkov, A. A., Xing, Y., Minden, Z., Xiao, Z., Cheong, K. Y., & Zhao, F. (2021). Resistive Switching Properties of ZrO2 Film by Plasma-Enhanced Atomic Layer Deposition for Non-volatile Memory Applications. Journal of Electronic Materials, 50(9), 5396–5401. https://doi.org/10.1007/s11664-021-09065-6

Chicago

Sivkov, Aleksey A., Yuan Xing, Zoe Minden, Zhigang Xiao, Kuan Yew Cheong, and Feng Zhao. 2021. “Resistive Switching Properties of ZrO2 Film by Plasma-Enhanced Atomic Layer Deposition for Non-Volatile Memory Applications.” Journal of Electronic Materials 50 (9): 5396–5401. doi:10.1007/s11664-021-09065-6.