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Optimization of post-deposition annealing temperature for improved signal-to-noise ratio in In2O3 gas sensor.
- Source :
- Semiconductor Science & Technology; Jul2021, Vol. 36 Issue 7, p1-9, 9p
- Publication Year :
- 2021
-
Abstract
- This paper investigates the effects of post-deposition annealing (PDA) temperature on H<subscript>2</subscript>S gas sensing and low-frequency noise characteristics of In<subscript>2</subscript>O<subscript>3</subscript> gas sensors. In<subscript>2</subscript>O<subscript>3</subscript> thin-films are deposited using the radio frequency (RF) sputtering method at an RF power of 150 W and post-annealed at various temperatures (200, 300, and 400 °C). The response of the In<subscript>2</subscript>O<subscript>3</subscript> gas sensor to H<subscript>2</subscript>S decreases with increasing PDA temperature due to the increase of grain size. However, the In<subscript>2</subscript>O<subscript>3</subscript> post-annealed at 200 °C shows the largest 1/f noise since the damaged sensing material-substrate interface is not fully recovered by the PDA. The sensors post-annealed at a higher temperature (300 °C and 400 °C) recover the damaged interface. Thanks to its moderate response and noise level, the sensor post-annealed at 300 °C shows the largest signal-to-noise ratio. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02681242
- Volume :
- 36
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Semiconductor Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 151155042
- Full Text :
- https://doi.org/10.1088/1361-6641/abf906